 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com STH200N55F3-2 N-channel 55 V, 1.8 m, 160 A, H2PAK STripFETTM III Power MOSFET Preliminary data Features Type STH200N55F3-2 VDSS 55 V RDS(on) max < 2.6 m ID (1) 160 A 2 1. Current limited by package Ultra low on-resistance 100% avalanche tested 3 1 3 Application HPAK Switching applications Description This STripFETTM III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 200N55F3 Package HPAK Packaging Tape and reel STH200N55F3-2 July 2009 Doc ID 16085 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www..com Contents STH200N55F3-2 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 16085 Rev 1 www..com STH200N55F3-2 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 55 20 160 160 640 300 2.0 1.0 -55 to 175 Operating junction temperature Unit V V A A A W W/C J C ID IDM (2) (3) PTOT EAS (4) Tstg Tj Single pulse avalanche energy Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-c 4. Starting Tj = 25 C, ID = 60 A, VDD = 35 V Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 0.5 35 Unit C/W C/W Rthj-pcb(1) Thermal resistance junction-pcb max 1. When mounted on 1 inch2 FR-4 2 oz Cu Doc ID 16085 Rev 1 3/11 www..com Electrical characteristics STH200N55F3-2 2 Electrical characteristics (Tcase = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 250 A, VGS= 0 Min. 55 1 10 100 2 1.8 4 2.6 Typ. Max. Unit V A A nA V m VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc = 125 C Gate body leakage current (VDS = 0) VDS = 20 V Gate threshold voltage VDS = VGS, ID = 250 A Static drain-source on resistance VGS = 10 V, ID = 60 A Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 6800 1450 15 100 30 26 Max. Unit pF pF pF nC nC nC VDS = 25 V, f = 1 MHz, VGS =0 - - VDD = 44 V, ID = 120 A, VGS = 10 V Figure 3 - - 4/11 Doc ID 16085 Rev 1 www..com STH200N55F3-2 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 27.5 V, ID = 60 A RG = 4.7 , VGS = 10 V, Figure 2 VDD = 27.5 V, ID = 60 A RG= 4.7 , VGS= 10 V, Figure 2 Min. Typ. 25 150 110 50 Max. Unit ns ns ns ns - - - - Table 7. Symbol ISD ISD (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 160 A, VGS = 0 ISD = 120 A,di/dt = 100 A/s VDD = 35 V, Tj = 150 C Figure 7 Test conditions Min. 60 110 3.5 Typ. Max. Unit 160 640 1.5 A A V ns nC A VSD (2) trr Qrr IRRM 2. 1. Pulse width limited by safe operating area Pulsed: Pulse duration = 300 s, duty cycle 1.5% Doc ID 16085 Rev 1 5/11 www..com Test circuits STH200N55F3-2 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 2200 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 6. Unclamped inductive waveform V(BR)DSS VD Figure 7. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 6/11 Doc ID 16085 Rev 1 www..com STH200N55F3-2 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16085 Rev 1 7/11 www..com Package mechanical data STH200N55F3-2 Table 8. Dim. HPAK 2 leads mechanical data mm Min. Typ. Max. 4.80 0.20 1.37 5.18 0.90 0.85 10.40 7.971 15.80 1.40 5.23 7.85 1.7 2.9 0.60 8 A A1 C e E F H H1 L L1 L2 L3 L4 M R V 4.30 0.03 1.17 4.98 0.50 0.78 10.00 7.171 15.30 1.27 4.93 7.45 1.5 2.6 0.20 0 8/11 Doc ID 16085 Rev 1 www..com STH200N55F3-2 Figure 8. HPAK 2 leads drawing Package mechanical data 8159712_B Figure 9. HPAK 2 recommended footprint 8159712_B Doc ID 16085 Rev 1 9/11 www..com Revision history STH200N55F3-2 5 Revision history Table 9. Date 30-Jul-2009 Document revision history Revision 1 First release. Changes 10/11 Doc ID 16085 Rev 1 www..com STH200N55F3-2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 16085 Rev 1 11/11 |
Price & Availability of STH200N55F3-2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |